CXMT begins mass production of fifth-generation DRAM memory

The announcement took place at the World Manufacturing Convention in Hefei. According to the company, the new technology platform has reduced the distance between key elements of the cell array to 11.95 nm using self-aligned quadruple patterning (SAQP) technology.

At the same time, the manufacturer presented two LPDDR5X memory chips with a capacity of 24 Gb per die, targeted at smartphones and portable electronics. According to CXMT, they hold 50% more data compared to the company's previous-generation counterparts and are already in mass production.

The company noted that the potential gross die per wafer metric before defect sorting increased by at least 50% compared to the fourth generation of the platform. Digital twin modeling of the production line was used during the development of G5.